Produkte > RENESAS ELECTRONICS CORPORATION > 70V659S12DR
70V659S12DR

70V659S12DR Renesas Electronics Corporation

70v6595857-datasheet Hersteller: Renesas Electronics Corporation
Description: IC SRAM 4.5MBIT PARALLEL 208PQFP
Packaging: Tray
Package / Case: 208-BFQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.45V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 208-PQFP (28x28)
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details 70V659S12DR Renesas Electronics Corporation

Description: IC SRAM 4.5MBIT PARALLEL 208PQFP, Packaging: Tray, Package / Case: 208-BFQFP, Mounting Type: Surface Mount, Memory Size: 4.5Mbit, Memory Type: Volatile, Operating Temperature: 0°C ~ 70°C (TA), Voltage - Supply: 3.15V ~ 3.45V, Technology: SRAM - Dual Port, Asynchronous, Memory Format: SRAM, Supplier Device Package: 208-PQFP (28x28), Write Cycle Time - Word, Page: 12ns, Memory Interface: Parallel, Access Time: 12 ns, Memory Organization: 128K x 36, DigiKey Programmable: Not Verified.