71V416S10PHGI

71V416S10PHGI

71V416S10PHGI

Hersteller: IDT
SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
IDT_71V416_DST_20161118-882873.pdf
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Technische Details 71V416S10PHGI

Description: IC SRAM 4M PARALLEL 44TSOP II, Technology: SRAM - Asynchronous, Voltage - Supply: 3V ~ 3.6V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 4Mb (256K x 16), Mounting Type: Surface Mount, Package / Case: 44-TSOP (0.400", 10.16mm Width), Packaging: Tube, Access Time: 10 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 10ns, Part Status: Active, Supplier Device Package: 44-TSOP II, Memory Format: SRAM.

Preis 71V416S10PHGI ab 0 EUR bis 0 EUR

71V416S10PHGI
71V416S10PHGI
Hersteller: Renesas Electronics America Inc.
Description: IC SRAM 4M PARALLEL 44TSOP II
Technology: SRAM - Asynchronous
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mb (256K x 16)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Tube
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Part Status: Active
Supplier Device Package: 44-TSOP II
Memory Format: SRAM
71v416sl
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