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94-3660PBF

94-3660PBF Infineon Technologies

fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 4.5A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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Technische Details 94-3660PBF Infineon Technologies

Description: MOSFET N-CH 100V 4.5A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 5.5V @ 250µA, Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube.