APT10050LVRG Microchip Technology
auf Bestellung 746 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
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1+ | 57.95 EUR |
100+ | 50.05 EUR |
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Technische Details APT10050LVRG Microchip Technology
Description: MOSFET N-CH 1000V 21A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V, Vgs(th) (Max) @ Id: 4V @ 2.5mA, Supplier Device Package: TO-264 [L], Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V.
Weitere Produktangebote APT10050LVRG nach Preis ab 57.2 EUR bis 62.32 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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APT10050LVRG | Hersteller : Microchip Technology / Atmel | MOSFET FG, MOSFET,1000V, TO-264, RoHS |
auf Bestellung 1863 Stücke: Lieferzeit 315-329 Tag (e) |
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APT10050LVRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 21A Pulsed drain current: 84A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: THT Gate charge: 500nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT10050LVRG | Hersteller : MICROSEMI |
TO264/POWER MOSFET - MOS5 APT10050 Anzahl je Verpackung: 25 Stücke |
Produkt ist nicht verfügbar |
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APT10050LVRG | Hersteller : Microchip Technology |
Description: MOSFET N-CH 1000V 21A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: TO-264 [L] Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT10050LVRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 21A Pulsed drain current: 84A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: THT Gate charge: 500nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |