APT10050LVRG Microchip Technology

Description: MOSFET N-CH 1000V 21A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
auf Bestellung 37 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 36.94 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details APT10050LVRG Microchip Technology
Category: THT N channel transistors, Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A, Type of transistor: N-MOSFET, Technology: POWER MOS 5®, Polarisation: unipolar, Drain-source voltage: 1kV, Drain current: 21A, Pulsed drain current: 84A, Power dissipation: 520W, Case: TO264, Gate-source voltage: ±30V, On-state resistance: 0.5Ω, Mounting: THT, Gate charge: 500nC, Kind of package: tube, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT10050LVRG nach Preis ab 34.62 EUR bis 40.08 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||
---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
APT10050LVRG | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 21A Pulsed drain current: 84A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: THT Gate charge: 500nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||
![]() |
APT10050LVRG | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 21A Pulsed drain current: 84A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: THT Gate charge: 500nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||
![]() |
APT10050LVRG | Hersteller : Microchip Technology |
![]() |
auf Bestellung 964 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
APT10050LVRG | Hersteller : MICROSEMI |
![]() Anzahl je Verpackung: 25 Stücke |
Produkt ist nicht verfügbar |