APT106N60B2C6 Microchip Technology
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 106A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 53A, 10V
Power Dissipation (Max): 833W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.4mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8390 pF @ 25 V
Description: MOSFET N-CH 600V 106A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 53A, 10V
Power Dissipation (Max): 833W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.4mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8390 pF @ 25 V
auf Bestellung 32 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 39.42 EUR |
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Technische Details APT106N60B2C6 Microchip Technology
Description: MOSFET N-CH 600V 106A T-MAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 106A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 53A, 10V, Power Dissipation (Max): 833W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 3.4mA, Supplier Device Package: T-MAX™ [B2], Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8390 pF @ 25 V.
Weitere Produktangebote APT106N60B2C6
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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APT106N60B2C6 | Hersteller : Microchip Technology | Trans MOSFET N-CH 600V 106A 3-Pin(3+Tab) T-MAX Tube |
Produkt ist nicht verfügbar |
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APT106N60B2C6 | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 68A; Idm: 318A; 833W; TO247MAX Mounting: THT Drain-source voltage: 600V Drain current: 68A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 833W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 318A Gate charge: 308nC Case: TO247MAX Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT106N60B2C6 | Hersteller : Microchip / Microsemi | MOSFET FG, MOSFET, 600V, 106A, TO-247 |
Produkt ist nicht verfügbar |
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APT106N60B2C6 | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 68A; Idm: 318A; 833W; TO247MAX Mounting: THT Drain-source voltage: 600V Drain current: 68A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 833W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 318A Gate charge: 308nC Case: TO247MAX |
Produkt ist nicht verfügbar |