APT106N60B2C6 Microchip Technology

Description: MOSFET N-CH 600V 106A T-MAX, Input Capacitance (Ciss) (Max) @ Vds: 8390 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: T-MAX™ [B2], Vgs(th) (Max) @ Id: 3.5V @ 3.4mA, Power Dissipation (Max): 833W (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 53A, 10V, Current - Continuous Drain (Id) @ 25°C: 106A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3 Variant, Packaging: Tube.