APT10M25BVRG Microchip Technology
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 23.98 EUR |
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Technische Details APT10M25BVRG Microchip Technology
Description: MOSFET N-CH 100V 75A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 500mA, 10V, Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-247 [B], Part Status: Active, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V.
Weitere Produktangebote APT10M25BVRG nach Preis ab 20.88 EUR bis 24.18 EUR
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APT10M25BVRG | Hersteller : Microchip Technology |
 Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 56 Stücke: Lieferzeit 14-21 Tag (e) |
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APT10M25BVRG | Hersteller : Microchip Technology |
MOSFET FG, MOSFET, 100V, TO-247, RoHS |
auf Bestellung 29 Stücke: Lieferzeit 14-28 Tag (e) |
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APT10M25BVRG | Hersteller : Microchip Technology |
Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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APT10M25BVRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Pulsed drain current: 300A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 25mΩ Mounting: THT Gate charge: 225nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT10M25BVRG | Hersteller : Microchip Technology |
Description: MOSFET N-CH 100V 75A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 [B] Part Status: Active Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT10M25BVRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Pulsed drain current: 300A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 25mΩ Mounting: THT Gate charge: 225nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |