APT10M25BVRG Microchip Technology
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 16.37 EUR |
| 100+ | 14.13 EUR |
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Technische Details APT10M25BVRG Microchip Technology
Category: THT N channel transistors, Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A, Mounting: THT, Kind of channel: enhancement, Type of transistor: N-MOSFET, Technology: POWER MOS 5®, Kind of package: tube, Polarisation: unipolar, Gate charge: 225nC, On-state resistance: 25mΩ, Gate-source voltage: ±30V, Drain current: 75A, Drain-source voltage: 100V, Pulsed drain current: 300A, Power dissipation: 300W, Case: TO247-3, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT10M25BVRG nach Preis ab 22.18 EUR bis 22.18 EUR
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APT10M25BVRG | Hersteller : Microchip Technology |
 Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 56 Stücke: Lieferzeit 14-21 Tag (e) |
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APT10M25BVRG | Hersteller : Microchip Technology |
Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 56 Stücke: Lieferzeit 14-21 Tag (e) |
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APT10M25BVRG | Hersteller : Microchip Technology |
Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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APT10M25BVRG | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A Mounting: THT Kind of channel: enhancement Type of transistor: N-MOSFET Technology: POWER MOS 5® Kind of package: tube Polarisation: unipolar Gate charge: 225nC On-state resistance: 25mΩ Gate-source voltage: ±30V Drain current: 75A Drain-source voltage: 100V Pulsed drain current: 300A Power dissipation: 300W Case: TO247-3 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT10M25BVRG | Hersteller : Microchip Technology |
Description: MOSFET N-CH 100V 75A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 [B] Part Status: Active Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT10M25BVRG | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A Mounting: THT Kind of channel: enhancement Type of transistor: N-MOSFET Technology: POWER MOS 5® Kind of package: tube Polarisation: unipolar Gate charge: 225nC On-state resistance: 25mΩ Gate-source voltage: ±30V Drain current: 75A Drain-source voltage: 100V Pulsed drain current: 300A Power dissipation: 300W Case: TO247-3 |
Produkt ist nicht verfügbar |