APT30N60KC6 Microchip Technology
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Technische Details APT30N60KC6 Microchip Technology
Description: MOSFET N-CH 600V 30A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V, Power Dissipation (Max): 219W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 960µA, Supplier Device Package: TO-220 [K], Part Status: Obsolete, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2267 pF @ 25 V.
Weitere Produktangebote APT30N60KC6
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APT30N60KC6 | Hersteller : MICROSEMI |
TO-220AB/30 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET APT30N60 Anzahl je Verpackung: 1 Stücke |
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APT30N60KC6 | Hersteller : Microsemi Corporation |
Description: MOSFET N-CH 600V 30A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V Power Dissipation (Max): 219W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 960µA Supplier Device Package: TO-220 [K] Part Status: Obsolete Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2267 pF @ 25 V |
Produkt ist nicht verfügbar |
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| APT30N60KC6 | Hersteller : Microchip Technology | IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single |
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