APT30N60SC6

APT30N60SC6 Microchip Technology


154877169-apt30n60b-sc6-a-pdf.pdf Hersteller: Microchip Technology
Trans MOSFET N-CH 600V 30A 3-Pin(2+Tab) D3PAK
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Technische Details APT30N60SC6 Microchip Technology

Description: MOSFET N-CH 600V 30A D3PAK, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V, Power Dissipation (Max): 219W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 960µA, Supplier Device Package: D3Pak, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2267 pF @ 25 V.

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APT30N60SC6 APT30N60SC6 Hersteller : Microsemi Corporation 77169-apt30n60bc6-apt30n60sc6-datasheet Description: MOSFET N-CH 600V 30A D3PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 960µA
Supplier Device Package: D3Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2267 pF @ 25 V
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APT30N60SC6 Hersteller : Microchip / Microsemi APT30N60B_SC6_A-1593879.pdf IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single
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