APT33N90JCCU3

APT33N90JCCU3

APT33N90JCCU3

Hersteller: Microsemi
Trans MOSFET N-CH 900V 33A 4-Pin SOT-227
2006946-apt33n90jccu3-rev1-pdf.pdf
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Technische Details APT33N90JCCU3

Description: MOSFET N-CH 900V 33A SOT227, Packaging: Bulk, Part Status: Obsolete, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 900V, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V, Vgs(th) (Max) @ Id: 3.5V @ 3mA, Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V, FET Feature: Super Junction, Power Dissipation (Max): 290W (Tc), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Supplier Device Package: SOT-227, Package / Case: SOT-227-4, miniBLOC, Manufacturer: Microsemi Corporation.

Preis APT33N90JCCU3 ab 0 EUR bis 0 EUR

APT33N90JCCU3
APT33N90JCCU3
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 900V 33A SOT227
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
FET Feature: Super Junction
Power Dissipation (Max): 290W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen