APT40GR120B2D30 Microchip Technology
Hersteller: Microchip TechnologyDescription: IGBT NPT 1200V 88A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/163ns
Switching Energy: 1.38mJ (on), 906µJ (off)
Test Condition: 600V, 40A, 4.3Ohm, 15V
Gate Charge: 210 nC
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
auf Bestellung 60 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 23.35 EUR |
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Technische Details APT40GR120B2D30 Microchip Technology
Description: IGBT NPT 1200V 88A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: NPT, Td (on/off) @ 25°C: 22ns/163ns, Switching Energy: 1.38mJ (on), 906µJ (off), Test Condition: 600V, 40A, 4.3Ohm, 15V, Gate Charge: 210 nC, Current - Collector (Ic) (Max): 88 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 500 W.
Weitere Produktangebote APT40GR120B2D30 nach Preis ab 20.33 EUR bis 23.5 EUR
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Verfügbarkeit |
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APT40GR120B2D30 | Hersteller : Microchip Technology |
IGBT Transistors FG, IGBT-COMBI, 1200V, 30A, TO-247 T-MAX |
auf Bestellung 60 Stücke: Lieferzeit 14-28 Tag (e) |
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| APT40GR120B2D30 | Hersteller : MICROSEMI |
TO-247-3/Ultra Fast NPT - IGBT APT40GR120 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-21 Tag (e) |
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APT40GR120B2D30 | Hersteller : Microchip Technology |
Trans IGBT Chip N-CH 1200V 88A 500W 3-Pin(3+Tab) T-MAX Tube |
Produkt ist nicht verfügbar |
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APT40GR120B2D30 | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; T-Max Mounting: THT Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 160A Type of transistor: IGBT Turn-on time: 47ns Kind of package: tube Case: T-Max Turn-off time: 232ns Gate-emitter voltage: ±30V Collector current: 40A Collector-emitter voltage: 1.2kV Power dissipation: 500W Gate charge: 0.21µC Technology: NPT; POWER MOS 8® Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT40GR120B2D30 | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; T-Max Mounting: THT Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 160A Type of transistor: IGBT Turn-on time: 47ns Kind of package: tube Case: T-Max Turn-off time: 232ns Gate-emitter voltage: ±30V Collector current: 40A Collector-emitter voltage: 1.2kV Power dissipation: 500W Gate charge: 0.21µC Technology: NPT; POWER MOS 8® |
Produkt ist nicht verfügbar |