APT40GR120B2D30 Microchip Technology
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 15.91 EUR |
| 100+ | 13.76 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details APT40GR120B2D30 Microchip Technology
Description: IGBT NPT 1200V 88A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: NPT, Td (on/off) @ 25°C: 22ns/163ns, Switching Energy: 1.38mJ (on), 906µJ (off), Test Condition: 600V, 40A, 4.3Ohm, 15V, Gate Charge: 210 nC, Current - Collector (Ic) (Max): 88 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 500 W.
Weitere Produktangebote APT40GR120B2D30 nach Preis ab 16.3 EUR bis 16.3 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
 |
APT40GR120B2D30 | Hersteller : Microchip Technology |
 Description: IGBT NPT 1200V 88A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: NPT Td (on/off) @ 25°C: 22ns/163ns Switching Energy: 1.38mJ (on), 906µJ (off) Test Condition: 600V, 40A, 4.3Ohm, 15V Gate Charge: 210 nC Current - Collector (Ic) (Max): 88 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 500 W |
auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||
| APT40GR120B2D30 | Hersteller : MICROSEMI |
TO-247-3/Ultra Fast NPT - IGBT APT40GR120 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-21 Tag (e) |
||||||
 |
APT40GR120B2D30 | Hersteller : Microchip Technology |
Trans IGBT Chip N-CH 1200V 88A 500W 3-Pin(3+Tab) T-MAX Tube |
Produkt ist nicht verfügbar |
|||||
 |
APT40GR120B2D30 | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; T-Max Case: T-Max Mounting: THT Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Part status: Not recommended for new designs Technology: NPT; POWER MOS 8® Kind of package: tube Turn-on time: 47ns Gate charge: 0.21µC Turn-off time: 232ns Collector current: 40A Gate-emitter voltage: ±30V Pulsed collector current: 160A Power dissipation: 500W Collector-emitter voltage: 1.2kV |
Produkt ist nicht verfügbar |