APT40GR120B2D30 Microchip Technology
| Anzahl | Privatkunde |
|---|---|
| 1+ | 18.93 EUR |
| 100+ | 16.37 EUR |
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Technische Details APT40GR120B2D30 Microchip Technology
Description: IGBT NPT 1200V 88A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: NPT, Td (on/off) @ 25°C: 22ns/163ns, Switching Energy: 1.38mJ (on), 906µJ (off), Test Condition: 600V, 40A, 4.3Ohm, 15V, Gate Charge: 210 nC, Current - Collector (Ic) (Max): 88 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 500 W.
Weitere Produktangebote APT40GR120B2D30 nach Preis ab 19.4 EUR bis 19.4 EUR
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APT40GR120B2D30 | Microchip Technology |
 Description: IGBT NPT 1200V 88A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: NPT Td (on/off) @ 25°C: 22ns/163ns Switching Energy: 1.38mJ (on), 906µJ (off) Test Condition: 600V, 40A, 4.3Ohm, 15V Gate Charge: 210 nC Current - Collector (Ic) (Max): 88 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 500 W |
auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
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APT40GR120B2D30 | MICROCHIP TECHNOLOGY |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; T-Max Power dissipation: 500W Gate charge: 0.21µC Technology: NPT; POWER MOS 8® Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 160A Type of transistor: IGBT Turn-on time: 47ns Kind of package: tube Case: T-Max Turn-off time: 232ns Gate-emitter voltage: ±30V Part status: Not recommended for new designs Collector current: 40A Mounting: THT Collector-emitter voltage: 1.2kV |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
| APT40GR120B2D30 | MICROSEMI |
TO-247-3/Ultra Fast NPT - IGBT APT40GR120 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| APT40GR120B2D30 |
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Hersteller: Microchip Technology
Description: IGBT NPT 1200V 88A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/163ns
Switching Energy: 1.38mJ (on), 906µJ (off)
Test Condition: 600V, 40A, 4.3Ohm, 15V
Gate Charge: 210 nC
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
Description: IGBT NPT 1200V 88A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/163ns
Switching Energy: 1.38mJ (on), 906µJ (off)
Test Condition: 600V, 40A, 4.3Ohm, 15V
Gate Charge: 210 nC
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 19.4 EUR |
| APT40GR120B2D30 |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; T-Max
Power dissipation: 500W
Gate charge: 0.21µC
Technology: NPT; POWER MOS 8®
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 160A
Type of transistor: IGBT
Turn-on time: 47ns
Kind of package: tube
Case: T-Max
Turn-off time: 232ns
Gate-emitter voltage: ±30V
Part status: Not recommended for new designs
Collector current: 40A
Mounting: THT
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; T-Max
Power dissipation: 500W
Gate charge: 0.21µC
Technology: NPT; POWER MOS 8®
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 160A
Type of transistor: IGBT
Turn-on time: 47ns
Kind of package: tube
Case: T-Max
Turn-off time: 232ns
Gate-emitter voltage: ±30V
Part status: Not recommended for new designs
Collector current: 40A
Mounting: THT
Collector-emitter voltage: 1.2kV
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
| APT40GR120B2D30 |
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auf Bestellung 30 Stücke:
Lieferzeit 7-21 Tag (e)