APT45GP120B2DQ2G MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 54A; 625W; T-Max
Case: T-Max
Power dissipation: 625W
Technology: POWER MOS 7®; PT
Gate charge: 185nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 54A
Mounting: THT
Collector-emitter voltage: 1.2kV
Pulsed collector current: 170A
Type of transistor: IGBT
Turn-on time: 47ns
Turn-off time: 230ns
Gate-emitter voltage: ±30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 27.83 EUR |
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Technische Details APT45GP120B2DQ2G MICROCHIP (MICROSEMI)
Description: IGBT 1200V 113A 625W TMAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A, IGBT Type: PT, Td (on/off) @ 25°C: 18ns/100ns, Switching Energy: 900µJ (on), 905µJ (off), Test Condition: 600V, 45A, 5Ohm, 15V, Gate Charge: 185 nC, Part Status: Active, Current - Collector (Ic) (Max): 113 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 170 A, Power - Max: 625 W.
Weitere Produktangebote APT45GP120B2DQ2G nach Preis ab 27.83 EUR bis 49.74 EUR
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APT45GP120B2DQ2G | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 54A; 625W; T-Max Case: T-Max Power dissipation: 625W Technology: POWER MOS 7®; PT Gate charge: 185nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 54A Mounting: THT Collector-emitter voltage: 1.2kV Pulsed collector current: 170A Type of transistor: IGBT Turn-on time: 47ns Turn-off time: 230ns Gate-emitter voltage: ±30V |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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APT45GP120B2DQ2G | Hersteller : Microchip Technology |
Description: IGBT 1200V 113A 625W TMAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A IGBT Type: PT Td (on/off) @ 25°C: 18ns/100ns Switching Energy: 900µJ (on), 905µJ (off) Test Condition: 600V, 45A, 5Ohm, 15V Gate Charge: 185 nC Part Status: Active Current - Collector (Ic) (Max): 113 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 170 A Power - Max: 625 W |
auf Bestellung 30 Stücke: Lieferzeit 21-28 Tag (e) |
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APT45GP120B2DQ2G | Hersteller : Microchip Technology |
IGBT Transistors IGBT PT MOS 7 Combi 1200 V 45 A TO-247 MAX |
auf Bestellung 36 Stücke: Lieferzeit 14-28 Tag (e) |
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APT45GP120B2DQ2G | Hersteller : Microchip Technology |
Trans IGBT Chip N-CH 1200V 113A 625000mW 3-Pin(3+Tab) T-MAX Tube |
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