APT45GP120B2DQ2G Microchip Technology
Hersteller: Microchip Technology
Description: IGBT PT 1200V 113A
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/100ns
Switching Energy: 900µJ (on), 905µJ (off)
Test Condition: 600V, 45A, 5Ohm, 15V
Gate Charge: 185 nC
Part Status: Active
Current - Collector (Ic) (Max): 113 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 170 A
Power - Max: 625 W
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Technische Details APT45GP120B2DQ2G Microchip Technology
Description: IGBT PT 1200V 113A, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A, IGBT Type: PT, Td (on/off) @ 25°C: 18ns/100ns, Switching Energy: 900µJ (on), 905µJ (off), Test Condition: 600V, 45A, 5Ohm, 15V, Gate Charge: 185 nC, Part Status: Active, Current - Collector (Ic) (Max): 113 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 170 A, Power - Max: 625 W.
Weitere Produktangebote APT45GP120B2DQ2G nach Preis ab 31.13 EUR bis 31.13 EUR
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APT45GP120B2DQ2G | Hersteller : Microchip Technology |
IGBTs IGBT PT MOS 7 Combi 1200 V 45 A TO-247 MAX |
auf Bestellung 17 Stücke: Lieferzeit 10-14 Tag (e) |
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