APT45GP120B2DQ2G Microchip Technology
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 31.13 EUR |
| 100+ | 26.91 EUR |
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Technische Details APT45GP120B2DQ2G Microchip Technology
Description: IGBT PT 1200V 113A, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A, IGBT Type: PT, Td (on/off) @ 25°C: 18ns/100ns, Switching Energy: 900µJ (on), 905µJ (off), Test Condition: 600V, 45A, 5Ohm, 15V, Gate Charge: 185 nC, Part Status: Active, Current - Collector (Ic) (Max): 113 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 170 A, Power - Max: 625 W.
Weitere Produktangebote APT45GP120B2DQ2G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APT45GP120B2DQ2G | Hersteller : Microchip Technology |
 Trans IGBT Chip N-CH 1200V 113A 625000mW 3-Pin(3+Tab) T-MAX Tube |
Produkt ist nicht verfügbar |
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APT45GP120B2DQ2G | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 54A; 625W; T-Max Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Case: T-Max Technology: POWER MOS 7®; PT Mounting: THT Kind of package: tube Turn-on time: 47ns Gate charge: 185nC Turn-off time: 230ns Gate-emitter voltage: ±30V Collector current: 54A Pulsed collector current: 170A Power dissipation: 625W Collector-emitter voltage: 1.2kV Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT45GP120B2DQ2G | Hersteller : Microchip Technology |
Description: IGBT PT 1200V 113A Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A IGBT Type: PT Td (on/off) @ 25°C: 18ns/100ns Switching Energy: 900µJ (on), 905µJ (off) Test Condition: 600V, 45A, 5Ohm, 15V Gate Charge: 185 nC Part Status: Active Current - Collector (Ic) (Max): 113 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 170 A Power - Max: 625 W |
Produkt ist nicht verfügbar |
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APT45GP120B2DQ2G | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 54A; 625W; T-Max Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Case: T-Max Technology: POWER MOS 7®; PT Mounting: THT Kind of package: tube Turn-on time: 47ns Gate charge: 185nC Turn-off time: 230ns Gate-emitter voltage: ±30V Collector current: 54A Pulsed collector current: 170A Power dissipation: 625W Collector-emitter voltage: 1.2kV |
Produkt ist nicht verfügbar |