APT45GP120JDQ2 Microchip Technology
Hersteller: Microchip TechnologyDescription: IGBT MOD 1200V 75A 329W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 329 W
Current - Collector Cutoff (Max): 750 µA
Input Capacitance (Cies) @ Vce: 4 nF @ 25 V
auf Bestellung 118 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 102.67 EUR |
| 100+ | 83.35 EUR |
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Technische Details APT45GP120JDQ2 Microchip Technology
Description: IGBT MOD 1200V 75A 329W ISOTOP, Packaging: Tube, Package / Case: ISOTOP, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A, NTC Thermistor: No, Supplier Device Package: ISOTOP®, IGBT Type: PT, Part Status: Active, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 329 W, Current - Collector Cutoff (Max): 750 µA, Input Capacitance (Cies) @ Vce: 4 nF @ 25 V.
Weitere Produktangebote APT45GP120JDQ2
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Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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APT45GP120JDQ2 | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 34A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Case: SOT227B Electrical mounting: screw Power dissipation: 329W Technology: POWER MOS 7® Mechanical mounting: screw Collector current: 34A Pulsed collector current: 170A Max. off-state voltage: 1.2kV Gate-emitter voltage: ±30V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT45GP120JDQ2 | Hersteller : Microchip Technology |
IGBT Transistors FG, IGBT-COMBI, 1200V, 45A, SOT-227 |
Produkt ist nicht verfügbar |
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APT45GP120JDQ2 | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 34A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Case: SOT227B Electrical mounting: screw Power dissipation: 329W Technology: POWER MOS 7® Mechanical mounting: screw Collector current: 34A Pulsed collector current: 170A Max. off-state voltage: 1.2kV Gate-emitter voltage: ±30V |
Produkt ist nicht verfügbar |