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APT45M100J Microsemi


APT45M100J_C-603092.pdf Hersteller: Microsemi
IGBT Transistors Power MOSFET - MOS8
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Technische Details APT45M100J Microsemi

Description: MOSFET N-CH 1000V 45A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 33A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: SOT-227, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 25 V.

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APT45M100J Hersteller : MICROCHIP (MICROSEMI) 7053-apt45m100j-datasheet Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 28A; ISOTOP; screw; Idm: 260A; 960W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 28A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.18Ω
Pulsed drain current: 260A
Power dissipation: 960W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT45M100J APT45M100J Hersteller : Microchip Technology 7053-apt45m100j-datasheet Description: MOSFET N-CH 1000V 45A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 33A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 25 V
Produkt ist nicht verfügbar
APT45M100J Hersteller : MICROCHIP (MICROSEMI) 7053-apt45m100j-datasheet Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 28A; ISOTOP; screw; Idm: 260A; 960W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 28A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.18Ω
Pulsed drain current: 260A
Power dissipation: 960W
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar