APT45M100J Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET N-CH 1000V 45A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 33A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 25 V
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details APT45M100J Microchip Technology
Description: MOSFET N-CH 1000V 45A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 33A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: SOT-227, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 25 V.
Weitere Produktangebote APT45M100J
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| APT45M100J | Hersteller : Microchip Technology |
IGBTs MOSFET MOS8 1000 V 45 A SOT-227 |
Produkt ist nicht verfügbar |