APT50GT120B2RDQ2G MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 150A
Turn-on time: 77ns
Turn-off time: 303ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 340nC
Technology: NPT
Case: T-Max
Anzahl je Verpackung: 1 Stücke
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Technische Details APT50GT120B2RDQ2G MICROCHIP (MICROSEMI)
Description: IGBT 1200V 94A 625W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A, IGBT Type: NPT, Td (on/off) @ 25°C: 24ns/230ns, Switching Energy: 2330µJ (off), Test Condition: 800V, 50A, 4.7Ohm, 15V, Gate Charge: 340 nC, Current - Collector (Ic) (Max): 94 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 625 W.
Weitere Produktangebote APT50GT120B2RDQ2G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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APT50GT120B2RDQ2G | Hersteller : Microchip Technology |
Trans IGBT Chip N-CH 1200V 94A 625000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| APT50GT120B2RDQ2G | Hersteller : MICROSEMI |
Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT50GT120B2RDQ2G | Hersteller : Microchip Technology |
Description: IGBT 1200V 94A 625W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A IGBT Type: NPT Td (on/off) @ 25°C: 24ns/230ns Switching Energy: 2330µJ (off) Test Condition: 800V, 50A, 4.7Ohm, 15V Gate Charge: 340 nC Current - Collector (Ic) (Max): 94 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 150 A Power - Max: 625 W |
Produkt ist nicht verfügbar |
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APT50GT120B2RDQ2G | Hersteller : Microchip Technology |
IGBT Transistors IGBT NPT Medium Frequency Combi 1200 V 50 A TO-247 MAX |
Produkt ist nicht verfügbar |
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APT50GT120B2RDQ2G | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 50A Pulsed collector current: 150A Turn-on time: 77ns Turn-off time: 303ns Type of transistor: IGBT Power dissipation: 625W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 340nC Technology: NPT Case: T-Max |
Produkt ist nicht verfügbar |