APT50GT120B2RDQ2G Microchip Technology
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Technische Details APT50GT120B2RDQ2G Microchip Technology
Description: IGBT NPT 1200V 94A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A, IGBT Type: NPT, Td (on/off) @ 25°C: 24ns/230ns, Switching Energy: 2330µJ (off), Test Condition: 800V, 50A, 4.7Ohm, 15V, Gate Charge: 340 nC, Current - Collector (Ic) (Max): 94 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 625 W.
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| APT50GT120B2RDQ2G | Hersteller : MICROSEMI | Anzahl je Verpackung: 1 Stücke |
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APT50GT120B2RDQ2G | Hersteller : Microchip Technology |
Description: IGBT NPT 1200V 94A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A IGBT Type: NPT Td (on/off) @ 25°C: 24ns/230ns Switching Energy: 2330µJ (off) Test Condition: 800V, 50A, 4.7Ohm, 15V Gate Charge: 340 nC Current - Collector (Ic) (Max): 94 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 150 A Power - Max: 625 W |
Produkt ist nicht verfügbar |
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APT50GT120B2RDQ2G | Hersteller : Microchip Technology |
 IGBTs IGBT NPT Medium Frequency Combi 1200 V 50 A TO-247 MAX |
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APT50GT120B2RDQ2G | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Technology: NPT Mounting: THT Kind of package: tube Turn-on time: 77ns Gate charge: 340nC Turn-off time: 303ns Gate-emitter voltage: ±30V Collector current: 50A Pulsed collector current: 150A Power dissipation: 625W Collector-emitter voltage: 1.2kV Case: T-Max |
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