APT65GP60JDQ2 Microchip Technology
auf Bestellung 20 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 92.43 EUR |
| 100+ | 79.85 EUR |
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Technische Details APT65GP60JDQ2 Microchip Technology
Description: IGBT 600V 130A 431W SOT227, Packaging: Tube, Package / Case: ISOTOP, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A, NTC Thermistor: No, Supplier Device Package: ISOTOP®, IGBT Type: PT, Current - Collector (Ic) (Max): 130 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 431 W, Current - Collector Cutoff (Max): 1.25 mA, Input Capacitance (Cies) @ Vce: 7.4 nF @ 25 V.
Weitere Produktangebote APT65GP60JDQ2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| APT65GP60JDQ2 | Hersteller : MICROCHIP (MICROSEMI) |
 Category: IGBT modulesDescription: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B Case: SOT227B Type of module: IGBT Technology: POWER MOS 7®; PT Max. off-state voltage: 0.6kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 60A Pulsed collector current: 250A Electrical mounting: screw Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT65GP60JDQ2 | Hersteller : MICROSEMI |
SOT-227/Discrete Semiconductor Products APT65GP60 Anzahl je Verpackung: 1 Stücke |
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APT65GP60JDQ2 | Hersteller : Microchip Technology |
Description: IGBT 600V 130A 431W SOT227 Packaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: PT Current - Collector (Ic) (Max): 130 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 431 W Current - Collector Cutoff (Max): 1.25 mA Input Capacitance (Cies) @ Vce: 7.4 nF @ 25 V |
Produkt ist nicht verfügbar |
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| APT65GP60JDQ2 | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B Case: SOT227B Type of module: IGBT Technology: POWER MOS 7®; PT Max. off-state voltage: 0.6kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 60A Pulsed collector current: 250A Electrical mounting: screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |