APT65GP60JDQ2 MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGYCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B; tube
Technology: POWER MOS 7®; PT
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 250A
Max. off-state voltage: 0.6kV
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Semiconductor structure: single transistor
Type of semiconductor module: IGBT
Anzahl je Verpackung: 1 Stücke
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Technische Details APT65GP60JDQ2 MICROCHIP TECHNOLOGY
Description: IGBT 600V 130A 431W SOT227, Packaging: Tube, Package / Case: ISOTOP, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A, NTC Thermistor: No, Supplier Device Package: ISOTOP®, IGBT Type: PT, Current - Collector (Ic) (Max): 130 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 431 W, Current - Collector Cutoff (Max): 1.25 mA, Input Capacitance (Cies) @ Vce: 7.4 nF @ 25 V.
Weitere Produktangebote APT65GP60JDQ2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APT65GP60JDQ2 | Hersteller : MICROSEMI |
SOT-227/Discrete Semiconductor Products APT65GP60 Anzahl je Verpackung: 1 Stücke |
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APT65GP60JDQ2 | Hersteller : Microchip Technology |
Description: IGBT 600V 130A 431W SOT227 Packaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: PT Current - Collector (Ic) (Max): 130 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 431 W Current - Collector Cutoff (Max): 1.25 mA Input Capacitance (Cies) @ Vce: 7.4 nF @ 25 V |
Produkt ist nicht verfügbar |
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| APT65GP60JDQ2 | Hersteller : Microchip Technology |
IGBT Modules IGBT PT MOS 7 Combi 600 V 65 A SOT-227 |
Produkt ist nicht verfügbar |
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| APT65GP60JDQ2 | Hersteller : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B; tube Technology: POWER MOS 7®; PT Gate-emitter voltage: ±20V Collector current: 60A Pulsed collector current: 250A Max. off-state voltage: 0.6kV Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Case: SOT227B Semiconductor structure: single transistor Type of semiconductor module: IGBT |
Produkt ist nicht verfügbar |