APTC90DSK12T1G

APTC90DSK12T1G

APTC90DSK12T1G

Hersteller: Microsemi
Trans MOSFET N-CH 900V 30A 12-Pin Case SP-1
1617388-aptc90dsk12t1g-rev1-pdf.pdf
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Technische Details APTC90DSK12T1G

Description: MOSFET 2N-CH 900V 30A SP1, Package / Case: SP1, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Power - Max: 250W, Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V, Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V, Vgs(th) (Max) @ Id: 3.5V @ 3mA, Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A, Drain to Source Voltage (Vdss): 900V, FET Feature: Super Junction, FET Type: 2 N Channel (Dual Buck Chopper), Part Status: Obsolete, Supplier Device Package: SP1, Packaging: Tray.

Preis APTC90DSK12T1G ab 0 EUR bis 0 EUR

APTC90DSK12T1G
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 900V 30A SP1
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 250W
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A
Drain to Source Voltage (Vdss): 900V
FET Feature: Super Junction
FET Type: 2 N Channel (Dual Buck Chopper)
Part Status: Obsolete
Supplier Device Package: SP1
Packaging: Tray
APTC90DSK12T1G.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen