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APTC90DSK12T1G Microsemi Corporation


APTC90DSK12T1G.pdf Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 900V 30A SP1
Packaging: Tray
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Dual Buck Chopper)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
FET Feature: Super Junction
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: SP1
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Technische Details APTC90DSK12T1G Microsemi Corporation

Description: MOSFET 2N-CH 900V 30A SP1, Packaging: Tray, Package / Case: SP1, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Dual Buck Chopper), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 250W, Drain to Source Voltage (Vdss): 900V, Current - Continuous Drain (Id) @ 25°C: 30A, Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V, Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V, Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V, FET Feature: Super Junction, Vgs(th) (Max) @ Id: 3.5V @ 3mA, Supplier Device Package: SP1.