APTC90SKM60T1G Microsemi Corporation

Description: MOSFET N-CH 900V 59A SP1, Packaging: Tray, Package / Case: SP1, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 59A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V, Power Dissipation (Max): 462W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 6mA, Supplier Device Package: SP1, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 100 V.