APTC90SKM60T1G

APTC90SKM60T1G

Hersteller: Microsemi
Discrete Semiconductor Modules Power Module - Coolmos
APTC90SKM60T1G-Rev1-603122.pdf
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Technische Details APTC90SKM60T1G

Description: MOSFET N-CH 900V 59A SP1, Packaging: Tray, Part Status: Obsolete, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 900V, Current - Continuous Drain (Id) @ 25°C: 59A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V, Vgs(th) (Max) @ Id: 3.5V @ 6mA, Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V, FET Feature: Super Junction, Power Dissipation (Max): 462W (Tc), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Supplier Device Package: SP1, Package / Case: SP1.

Preis APTC90SKM60T1G ab 0 EUR bis 0 EUR

APTC90SKM60T1G
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 900V 59A SP1
Packaging: Tray
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V
FET Feature: Super Junction
Power Dissipation (Max): 462W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP1
Package / Case: SP1
7394-aptc90skm60t1g-datasheet
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