APTCV40H60CT1G Microchip Technology
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Technische Details APTCV40H60CT1G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 600V; 27A; SP1; Ugs: ±20V; Idm: 115A, Type of module: MOSFET/IGBT transistor, Semiconductor structure: transistor/transistor, Drain-source voltage: 600V, Drain current: 27A, Case: SP1, Topology: H-bridge; NTC thermistor, Electrical mounting: Press-in PCB, On-state resistance: 83mΩ, Pulsed drain current: 115A, Power dissipation: 250W, Technology: CoolMOS™; Field Stop; SiC; Trench, Gate-source voltage: ±20V, Mechanical mounting: screw, Collector current: 50A.
Weitere Produktangebote APTCV40H60CT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APTCV40H60CT1G | Hersteller : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 600V; 27A; SP1; Ugs: ±20V; Idm: 115A Type of module: MOSFET/IGBT transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 27A Case: SP1 Topology: H-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 83mΩ Pulsed drain current: 115A Power dissipation: 250W Technology: CoolMOS™; Field Stop; SiC; Trench Gate-source voltage: ±20V Mechanical mounting: screw Collector current: 50A |
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| APTCV40H60CT1G | Hersteller : Microchip Technology |
Description: IGBT MODULE 600V 80A 176W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 176 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V |
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| APTCV40H60CT1G | Hersteller : Microchip Technology |
IGBT Modules DOR CC8004 |
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| APTCV40H60CT1G | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 27A; SP1; Ugs: ±20V; Idm: 115A Type of module: MOSFET/IGBT transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 27A Case: SP1 Topology: H-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 83mΩ Pulsed drain current: 115A Power dissipation: 250W Technology: CoolMOS™; Field Stop; SiC; Trench Gate-source voltage: ±20V Mechanical mounting: screw Collector current: 50A |
Produkt ist nicht verfügbar |