APTCV40H60CT1G Microchip Technology
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details APTCV40H60CT1G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 600V; 27A; SP1; Press-in PCB; 250W, Collector current: 50A, Power dissipation: 250W, Case: SP1, Drain-source voltage: 600V, Topology: H-bridge; NTC thermistor, Type of semiconductor module: MOSFET / IGBT transistor, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Semiconductor structure: transistor/transistor, On-state resistance: 83mΩ, Gate-source voltage: ±20V, Drain current: 27A, Pulsed drain current: 115A, Technology: CoolMOS™; Field Stop; SiC; Trench, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTCV40H60CT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| APTCV40H60CT1G | Hersteller : MICROCHIP TECHNOLOGY |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 600V; 27A; SP1; Press-in PCB; 250W Collector current: 50A Power dissipation: 250W Case: SP1 Drain-source voltage: 600V Topology: H-bridge; NTC thermistor Type of semiconductor module: MOSFET / IGBT transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor On-state resistance: 83mΩ Gate-source voltage: ±20V Drain current: 27A Pulsed drain current: 115A Technology: CoolMOS™; Field Stop; SiC; Trench Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APTCV40H60CT1G | Hersteller : Microchip Technology |
Description: IGBT MODULE 600V 80A 176W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 176 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V |
Produkt ist nicht verfügbar |
||
| APTCV40H60CT1G | Hersteller : Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-COOLMOS-SBD-SP1 |
Produkt ist nicht verfügbar |
||
| APTCV40H60CT1G | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 27A; SP1; Press-in PCB; 250W Collector current: 50A Power dissipation: 250W Case: SP1 Drain-source voltage: 600V Topology: H-bridge; NTC thermistor Type of semiconductor module: MOSFET / IGBT transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor On-state resistance: 83mΩ Gate-source voltage: ±20V Drain current: 27A Pulsed drain current: 115A Technology: CoolMOS™; Field Stop; SiC; Trench |
Produkt ist nicht verfügbar |