APTGF25DSK120T3G Microchip Technology
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Technische Details APTGF25DSK120T3G Microchip Technology
Description: IGBT MODULE 1200V 40A 208W SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Input: Standard, Configuration: Dual Buck Chopper, Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A, NTC Thermistor: Yes, Supplier Device Package: SP3, IGBT Type: NPT, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 208 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V.
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APTGF25DSK120T3G | Hersteller : Microsemi Corporation |
Description: IGBT MODULE 1200V 40A 208W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Dual Buck Chopper Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: NPT Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 208 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V |
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