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APTGLQ75H65T1G MICROCHIP (MICROSEMI)


125281-aptglq75h65t1g-datasheet Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Technology: Field Stop; Trench
Collector current: 75A
Case: SP1
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Application: motors
Electrical mounting: Press-in PCB
Topology: H-bridge; NTC thermistor
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 12 Stücke
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Technische Details APTGLQ75H65T1G MICROCHIP (MICROSEMI)

Description: IGBT MODULE 650V 150A 250W SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Through Hole, Input: Standard, Configuration: Full Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A, NTC Thermistor: Yes, Supplier Device Package: SP1, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 250 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V.

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APTGLQ75H65T1G Hersteller : Microchip Technology 125281-aptglq75h65t1g-datasheet Description: IGBT MODULE 650V 150A 250W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Through Hole
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
Produkt ist nicht verfügbar
APTGLQ75H65T1G Hersteller : Microsemi APTGLQ75H65T1G-Rev1-600921.pdf IGBT Modules Power Module - IGBT
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APTGLQ75H65T1G Hersteller : Microchip Technology APTGLQ75H65T1G_Rev1-3133450.pdf IGBT Modules CC8103
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APTGLQ75H65T1G Hersteller : MICROCHIP (MICROSEMI) 125281-aptglq75h65t1g-datasheet Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Technology: Field Stop; Trench
Collector current: 75A
Case: SP1
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Application: motors
Electrical mounting: Press-in PCB
Topology: H-bridge; NTC thermistor
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar