APTM100A23STG Microchip Technology
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Technische Details APTM100A23STG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 1kV; 27A; SP4; FASTON connectors,screw, Semiconductor structure: diode/transistor, Case: SP4, Power dissipation: 694W, Technology: POWER MOS 7®, Electrical mounting: FASTON connectors; screw, Pulsed drain current: 144A, Drain current: 27A, Drain-source voltage: 1kV, Mechanical mounting: screw, Gate-source voltage: ±30V, Type of module: MOSFET transistor, On-state resistance: 0.27Ω, Topology: MOSFET half-bridge + serial diodes + parrallel diodes; NTC thermistor, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM100A23STG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| APTM100A23STG | Hersteller : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; diode/transistor; 1kV; 27A; SP4; FASTON connectors,screw Semiconductor structure: diode/transistor Case: SP4 Power dissipation: 694W Technology: POWER MOS 7® Electrical mounting: FASTON connectors; screw Pulsed drain current: 144A Drain current: 27A Drain-source voltage: 1kV Mechanical mounting: screw Gate-source voltage: ±30V Type of module: MOSFET transistor On-state resistance: 0.27Ω Topology: MOSFET half-bridge + serial diodes + parrallel diodes; NTC thermistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM100A23STG | Hersteller : MICROSEMI |
SP4/36 A, 1000 V, 0.27 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER,MOSFET APTM100A23 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM100A23STG | Hersteller : Microchip Technology |
Description: MOSFET 2N-CH 1000V 36A SP4 |
Produkt ist nicht verfügbar |
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| APTM100A23STG | Hersteller : Microchip Technology |
Discrete Semiconductor Modules CC4007 |
Produkt ist nicht verfügbar |
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| APTM100A23STG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 27A; SP4; FASTON connectors,screw Semiconductor structure: diode/transistor Case: SP4 Power dissipation: 694W Technology: POWER MOS 7® Electrical mounting: FASTON connectors; screw Pulsed drain current: 144A Drain current: 27A Drain-source voltage: 1kV Mechanical mounting: screw Gate-source voltage: ±30V Type of module: MOSFET transistor On-state resistance: 0.27Ω Topology: MOSFET half-bridge + serial diodes + parrallel diodes; NTC thermistor |
Produkt ist nicht verfügbar |