APTM100A23STG Microchip Technology
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Technische Details APTM100A23STG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 1kV; 27A; SP4; FASTON connectors,screw, Semiconductor structure: diode/transistor, Case: SP4, Drain-source voltage: 1kV, Drain current: 27A, On-state resistance: 0.27Ω, Power dissipation: 694W, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Type of module: MOSFET transistor, Technology: POWER MOS 7®, Gate-source voltage: ±30V, Topology: MOSFET half-bridge + serial diodes + parrallel diodes; NTC thermistor, Pulsed drain current: 144A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM100A23STG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| APTM100A23STG | Hersteller : MICROCHIP TECHNOLOGY |
 Category: Transistor modules MOSFETDescription: Module; diode/transistor; 1kV; 27A; SP4; FASTON connectors,screw Semiconductor structure: diode/transistor Case: SP4 Drain-source voltage: 1kV Drain current: 27A On-state resistance: 0.27Ω Power dissipation: 694W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes + parrallel diodes; NTC thermistor Pulsed drain current: 144A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM100A23STG | Hersteller : MICROSEMI |
SP4/36 A, 1000 V, 0.27 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER,MOSFET APTM100A23 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM100A23STG | Hersteller : Microchip Technology |
Description: MOSFET 2N-CH 1000V 36A SP4 |
Produkt ist nicht verfügbar |
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| APTM100A23STG | Hersteller : Microchip Technology |
Discrete Semiconductor Modules CC4007 |
Produkt ist nicht verfügbar |
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| APTM100A23STG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 27A; SP4; FASTON connectors,screw Semiconductor structure: diode/transistor Case: SP4 Drain-source voltage: 1kV Drain current: 27A On-state resistance: 0.27Ω Power dissipation: 694W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes + parrallel diodes; NTC thermistor Pulsed drain current: 144A |
Produkt ist nicht verfügbar |