APTM100AM90FG Microchip Technology
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Technische Details APTM100AM90FG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1kV; 59A; SP6C; Idm: 312A; 1.25kW, Type of semiconductor module: MOSFET transistor, Semiconductor structure: transistor/transistor, Drain-source voltage: 1kV, Drain current: 59A, On-state resistance: 0.105Ω, Power dissipation: 1.25kW, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Technology: FREDFET; POWER MOS 7®, Gate-source voltage: ±30V, Topology: MOSFET half-bridge, Pulsed drain current: 312A, Case: SP6C, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM100AM90FG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APTM100AM90FG | Hersteller : MICROCHIP TECHNOLOGY |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1kV; 59A; SP6C; Idm: 312A; 1.25kW Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 59A On-state resistance: 0.105Ω Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge Pulsed drain current: 312A Case: SP6C Anzahl je Verpackung: 1 Stücke |
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APTM100AM90FG | Hersteller : Microchip Technology |
Description: MOSFET 2N-CH 1000V 78A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1250W Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 78A Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V Vgs(th) (Max) @ Id: 5V @ 10mA Supplier Device Package: SP6 |
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| APTM100AM90FG | Hersteller : Microchip / Microsemi |
Discrete Semiconductor Modules CC6067 |
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| APTM100AM90FG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 59A; SP6C; Idm: 312A; 1.25kW Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1kV Drain current: 59A On-state resistance: 0.105Ω Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge Pulsed drain current: 312A Case: SP6C |
Produkt ist nicht verfügbar |