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APTM100H35FT3G

APTM100H35FT3G Microchip Technology


6808010-aptm100h35ft3g-rev4-datasheet.pdf Hersteller: Microchip Technology
Trans MOSFET N-CH 1KV 22A 32-Pin Case SP-3 Tube
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Technische Details APTM100H35FT3G Microchip Technology

Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1kV; 17A; SP3; Press-in PCB; 390W, Type of module: MOSFET transistor, Mechanical mounting: screw, Drain current: 17A, Drain-source voltage: 1kV, Electrical mounting: Press-in PCB, Gate-source voltage: ±30V, Semiconductor structure: transistor/transistor, Case: SP3, On-state resistance: 0.42Ω, Topology: H-bridge; NTC thermistor, Pulsed drain current: 88A, Power dissipation: 390W, Technology: FREDFET; POWER MOS 7®, Anzahl je Verpackung: 1 Stücke.

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APTM100H35FT3G Hersteller : MICROCHIP (MICROSEMI) index.php?option=com_docman&task=doc_download&gid=8010 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP3; Press-in PCB; 390W
Type of module: MOSFET transistor
Mechanical mounting: screw
Drain current: 17A
Drain-source voltage: 1kV
Electrical mounting: Press-in PCB
Gate-source voltage: ±30V
Semiconductor structure: transistor/transistor
Case: SP3
On-state resistance: 0.42Ω
Topology: H-bridge; NTC thermistor
Pulsed drain current: 88A
Power dissipation: 390W
Technology: FREDFET; POWER MOS 7®
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTM100H35FT3G Hersteller : Microsemi Corporation index.php?option=com_docman&task=doc_download&gid=8010 Description: MOSFET 4N-CH 1000V 22A SP3
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APTM100H35FT3G Hersteller : Microchip / Microsemi index.php?option=com_docman&task=doc_download&gid=8010 Discrete Semiconductor Modules DOR CC3015
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APTM100H35FT3G Hersteller : Microchip Technology index.php?option=com_docman&task=doc_download&gid=8010 Discrete Semiconductor Modules DOR CC3015
Produkt ist nicht verfügbar
APTM100H35FT3G Hersteller : MICROCHIP (MICROSEMI) index.php?option=com_docman&task=doc_download&gid=8010 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP3; Press-in PCB; 390W
Type of module: MOSFET transistor
Mechanical mounting: screw
Drain current: 17A
Drain-source voltage: 1kV
Electrical mounting: Press-in PCB
Gate-source voltage: ±30V
Semiconductor structure: transistor/transistor
Case: SP3
On-state resistance: 0.42Ω
Topology: H-bridge; NTC thermistor
Pulsed drain current: 88A
Power dissipation: 390W
Technology: FREDFET; POWER MOS 7®
Produkt ist nicht verfügbar