APTM100UM45DAG Microchip Technology
auf Bestellung 1 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 1067.51 EUR |
| 100+ | 793 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details APTM100UM45DAG Microchip Technology
Description: MOSFET N-CH 1000V 215A SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 215A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 107.5A, 10V, Power Dissipation (Max): 5000W (Tc), Vgs(th) (Max) @ Id: 5V @ 30mA, Supplier Device Package: SP6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 1602 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 42700 pF @ 25 V.
Weitere Produktangebote APTM100UM45DAG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| APTM100UM45DAG | Hersteller : Microchip / Microsemi |
 Discrete Semiconductor Modules CC6037 |
auf Bestellung 2 Stücke: Lieferzeit 14-28 Tag (e) |
||
| APTM100UM45DAG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 160A; SP6C; Idm: 860A; 5kW; Ugs: ±30V Type of module: MOSFET transistor Mechanical mounting: screw Drain current: 160A Drain-source voltage: 1kV Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Semiconductor structure: diode/transistor Case: SP6C On-state resistance: 52mΩ Topology: single transistor + series diode Pulsed drain current: 860A Power dissipation: 5kW Technology: POWER MOS 7® Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| APTM100UM45DAG | Hersteller : MICROSEMI |
SP6CMOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
 |
APTM100UM45DAG | Hersteller : Microchip Technology |
Description: MOSFET N-CH 1000V 215A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 215A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 107.5A, 10V Power Dissipation (Max): 5000W (Tc) Vgs(th) (Max) @ Id: 5V @ 30mA Supplier Device Package: SP6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 1602 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 42700 pF @ 25 V |
Produkt ist nicht verfügbar |
|
| APTM100UM45DAG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 160A; SP6C; Idm: 860A; 5kW; Ugs: ±30V Type of module: MOSFET transistor Mechanical mounting: screw Drain current: 160A Drain-source voltage: 1kV Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Semiconductor structure: diode/transistor Case: SP6C On-state resistance: 52mΩ Topology: single transistor + series diode Pulsed drain current: 860A Power dissipation: 5kW Technology: POWER MOS 7® |
Produkt ist nicht verfügbar |