APTM100UM45DAG Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET N-CH 1000V 215A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 107.5A, 10V
Power Dissipation (Max): 5000W (Tc)
Vgs(th) (Max) @ Id: 5V @ 30mA
Supplier Device Package: SP6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 1602 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 42700 pF @ 25 V
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 486.06 EUR |
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Technische Details APTM100UM45DAG Microchip Technology
Description: MOSFET N-CH 1000V 215A SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 215A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 107.5A, 10V, Power Dissipation (Max): 5000W (Tc), Vgs(th) (Max) @ Id: 5V @ 30mA, Supplier Device Package: SP6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 1602 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 42700 pF @ 25 V.
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