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APTM10UM01FAG Microchip Technology


APTM10UM01FAG_Rev2-3445071.pdf Hersteller: Microchip Technology
MOSFET Modules PM-MOSFET-FREDFET-5-SP6C
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Technische Details APTM10UM01FAG Microchip Technology

Description: MOSFET N-CH 100V 860A SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 860A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 275A, 10V, Power Dissipation (Max): 2500W (Tc), Vgs(th) (Max) @ Id: 4V @ 12mA, Supplier Device Package: SP6, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 2100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 60000 pF @ 25 V.

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APTM10UM01FAG Hersteller : Microchip / Microsemi High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Discrete Semiconductor Modules CC6092
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APTM10UM01FAG Hersteller : Microchip Technology 11468064-aptm10um01fag-rev1-pdf.pdf Trans MOSFET N-CH 100V 860A 5-Pin Case SP-6 Tube
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APTM10UM01FAG Hersteller : MICROCHIP (MICROSEMI) High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 640A; SP6C; Idm: 2200A; 2.5kW
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 640A
Case: SP6C
Electrical mounting: FASTON connectors; screw
On-state resistance: 1.6mΩ
Pulsed drain current: 2200A
Power dissipation: 2.5kW
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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APTM10UM01FAG APTM10UM01FAG Hersteller : Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 100V 860A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 275A, 10V
Power Dissipation (Max): 2500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 12mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 60000 pF @ 25 V
Produkt ist nicht verfügbar
APTM10UM01FAG Hersteller : MICROCHIP (MICROSEMI) High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 640A; SP6C; Idm: 2200A; 2.5kW
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 640A
Case: SP6C
Electrical mounting: FASTON connectors; screw
On-state resistance: 1.6mΩ
Pulsed drain current: 2200A
Power dissipation: 2.5kW
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar