APTM10UM01FAG Microchip Technology
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 617.44 EUR |
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Technische Details APTM10UM01FAG Microchip Technology
Description: MOSFET N-CH 100V 860A SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 860A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 275A, 10V, Power Dissipation (Max): 2500W (Tc), Vgs(th) (Max) @ Id: 4V @ 12mA, Supplier Device Package: SP6, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 2100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 60000 pF @ 25 V.
Weitere Produktangebote APTM10UM01FAG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| APTM10UM01FAG | Hersteller : Microchip / Microsemi |
 Discrete Semiconductor Modules CC6092 |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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| APTM10UM01FAG | Hersteller : Microchip Technology |
Trans MOSFET N-CH 100V 860A 5-Pin Case SP-6 Tube |
Produkt ist nicht verfügbar |
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| APTM10UM01FAG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 640A; SP6C; Idm: 2200A; 2.5kW Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 640A Case: SP6C Electrical mounting: FASTON connectors; screw On-state resistance: 1.6mΩ Pulsed drain current: 2200A Power dissipation: 2.5kW Technology: FREDFET; POWER MOS 5® Gate-source voltage: ±30V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM10UM01FAG | Hersteller : Microchip Technology |
Description: MOSFET N-CH 100V 860A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 860A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 275A, 10V Power Dissipation (Max): 2500W (Tc) Vgs(th) (Max) @ Id: 4V @ 12mA Supplier Device Package: SP6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 60000 pF @ 25 V |
Produkt ist nicht verfügbar |
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| APTM10UM01FAG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 640A; SP6C; Idm: 2200A; 2.5kW Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 640A Case: SP6C Electrical mounting: FASTON connectors; screw On-state resistance: 1.6mΩ Pulsed drain current: 2200A Power dissipation: 2.5kW Technology: FREDFET; POWER MOS 5® Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |