APTM10UM01FAG Microchip Technology

Description: MOSFET N-CH 100V 860A SP6, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SP6, Vgs(th) (Max) @ Id: 4V @ 12mA, Power Dissipation (Max): 2500W (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 275A, 10V, Current - Continuous Drain (Id) @ 25°C: 860A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SP6, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 60000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 2100 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±30V.