APTM120DA30T1G Microchip Technology
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Technische Details APTM120DA30T1G Microchip Technology
Description: MOSFET N-CH 1200V 31A SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 25A, 10V, Power Dissipation (Max): 657W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: SP1, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V.
Weitere Produktangebote APTM120DA30T1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| APTM120DA30T1G | Hersteller : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; Idm: 195A Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 195A Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 23A On-state resistance: 0.36Ω Power dissipation: 657W Electrical mounting: Press-in PCB Technology: POWER MOS 8® Gate-source voltage: ±30V Topology: boost chopper; NTC thermistor Case: SP1 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM120DA30T1G | Hersteller : Microchip Technology |
Description: MOSFET N-CH 1200V 31A SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 25A, 10V Power Dissipation (Max): 657W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SP1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V |
Produkt ist nicht verfügbar |
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| APTM120DA30T1G | Hersteller : Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-7-SP1 |
Produkt ist nicht verfügbar |
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| APTM120DA30T1G | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; Idm: 195A Type of module: MOSFET transistor Mechanical mounting: screw Pulsed drain current: 195A Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 23A On-state resistance: 0.36Ω Power dissipation: 657W Electrical mounting: Press-in PCB Technology: POWER MOS 8® Gate-source voltage: ±30V Topology: boost chopper; NTC thermistor Case: SP1 |
Produkt ist nicht verfügbar |