APTM120DA30T1G Microchip Technology

Description: MOSFET N-CH 1200V 31A SP1, Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SP1, Vgs(th) (Max) @ Id: 5V @ 2.5mA, Power Dissipation (Max): 657W (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SP1, Packaging: Bulk.