APTM120DA30T1G Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET N-CH 1200V 31A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 25A, 10V
Power Dissipation (Max): 657W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V
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Technische Details APTM120DA30T1G Microchip Technology
Description: MOSFET N-CH 1200V 31A SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 25A, 10V, Power Dissipation (Max): 657W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: SP1, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| APTM120DA30T1G | Hersteller : Microchip Technology |
MOSFET Modules PM-MOSFET-7-SP1 |
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| APTM120DA30T1G | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; Idm: 195A Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 1.2kV Drain current: 23A Case: SP1 Topology: boost chopper; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 0.36Ω Pulsed drain current: 195A Power dissipation: 657W Technology: POWER MOS 8® Mechanical mounting: screw Gate-source voltage: ±30V |
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