APTM120SK56T1G
APTM120SK56T1G
Hersteller: Microsemi CorporationDescription: MOSFET N-CH 1200V 18A SP1
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SP1
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 672mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7736 pF @ 25 V

Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Technische Details APTM120SK56T1G
Description: MOSFET N-CH 1200V 18A SP1, Manufacturer: Microsemi Corporation, Packaging: Bulk, Part Status: Obsolete, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 1200V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 672mOhm @ 14A, 10V, Vgs(th) (Max) @ Id: 5V @ 2.5mA, Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V, Vgs (Max): ±30V, Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V, Power Dissipation (Max): 390W (Tc), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Supplier Device Package: SP1, Package / Case: SP1.
Preis APTM120SK56T1G ab 0 EUR bis 0 EUR
APTM120SK56T1G Hersteller: Microsemi Corporation Description: MOSFET N-CH 1200V 18A SP1 Manufacturer: Microsemi Corporation Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 672mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V Power Dissipation (Max): 390W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1 ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|