APTM20AM04FG Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET 2N-CH 200V 372A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 372A
Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Part Status: Active
auf Bestellung 13 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 856.91 EUR |
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Technische Details APTM20AM04FG Microchip Technology
Description: MOSFET 2N-CH 200V 372A SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1250W, Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 372A, Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V, Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V, Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 10mA, Supplier Device Package: SP6, Part Status: Active.
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Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 278A; SP6C; Idm: 1488A; 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge Pulsed drain current: 1488A Case: SP6C Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 278A On-state resistance: 5mΩ Power dissipation: 1.25kW Type of module: MOSFET transistor |
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