APTM20AM04FG Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET 2N-CH 200V 372A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 372A
Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Part Status: Active
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 392.97 EUR |
Produktrezensionen
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Technische Details APTM20AM04FG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 200V; 278A; SP6C; Idm: 1488A; 1.25kW, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Technology: FREDFET; POWER MOS 7®, Gate-source voltage: ±30V, Topology: MOSFET half-bridge, Pulsed drain current: 1488A, Type of semiconductor module: MOSFET transistor, Case: SP6C, Semiconductor structure: transistor/transistor, Drain-source voltage: 200V, Drain current: 278A, On-state resistance: 5mΩ, Power dissipation: 1.25kW, Anzahl je Verpackung: 1 Stücke.
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Preis |
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APTM20AM04FG | Hersteller : Microchip Technology |
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Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 278A; SP6C; Idm: 1488A; 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge Pulsed drain current: 1488A Type of semiconductor module: MOSFET transistor Case: SP6C Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 278A On-state resistance: 5mΩ Power dissipation: 1.25kW Anzahl je Verpackung: 1 Stücke |
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| APTM20AM04FG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 200V; 278A; SP6C; Idm: 1488A; 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge Pulsed drain current: 1488A Type of semiconductor module: MOSFET transistor Case: SP6C Semiconductor structure: transistor/transistor Drain-source voltage: 200V Drain current: 278A On-state resistance: 5mΩ Power dissipation: 1.25kW |
Produkt ist nicht verfügbar |