Technische Details APTM20SKM05G Microsemi
Description: MOSFET N-CH 200V 317A SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 317A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V, Power Dissipation (Max): 1136W (Tc), Vgs(th) (Max) @ Id: 5V @ 10mA, Supplier Device Package: SP6, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 448 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 27400 pF @ 25 V.
Weitere Produktangebote APTM20SKM05G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| APTM20SKM05G | Hersteller : Microsemi Corporation |
 Description: MOSFET N-CH 200V 317A SP6Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 317A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V Power Dissipation (Max): 1136W (Tc) Vgs(th) (Max) @ Id: 5V @ 10mA Supplier Device Package: SP6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 448 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27400 pF @ 25 V |
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