APTM50DDA10T3G MICROCHIP (MICROSEMI)

Category: Transistor modules MOSFET, Description: Module; diode/transistor; 500V; 28A; SP3; Press-in PCB; Idm: 140A, Pulsed drain current: 140A, Power dissipation: 312W, Technology: POWER MOS 7®, Drain current: 28A, Drain-source voltage: 500V, Mechanical mounting: screw, Electrical mounting: Press-in PCB, Gate-source voltage: ±30V, Type of module: MOSFET transistor, Semiconductor structure: diode/transistor, Case: SP3, On-state resistance: 0.12Ω, Topology: boost chopper x2; NTC thermistor, Anzahl je Verpackung: 1 Stücke.