APTM50DDA10T3G Microchip Technology

Category: Transistor modules MOSFET, Description: Module; diode/transistor; 500V; 28A; SP3; Press-in PCB; Idm: 140A, On-state resistance: 0.12Ω, Drain current: 28A, Power dissipation: 312W, Drain-source voltage: 500V, Pulsed drain current: 140A, Topology: boost chopper x2; NTC thermistor, Case: SP3, Semiconductor structure: diode/transistor, Technology: POWER MOS 7®, Type of semiconductor module: MOSFET transistor, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Gate-source voltage: ±30V, Anzahl je Verpackung: 1 Stücke.