APTM50DDA10T3G Microchip Technology
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details APTM50DDA10T3G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 500V; 28A; SP3; Press-in PCB; Idm: 140A, Semiconductor structure: diode/transistor, Case: SP3, Type of semiconductor module: MOSFET transistor, Electrical mounting: Press-in PCB, Technology: POWER MOS 7®, On-state resistance: 0.12Ω, Drain current: 28A, Gate-source voltage: ±30V, Pulsed drain current: 140A, Power dissipation: 312W, Drain-source voltage: 500V, Topology: boost chopper x2; NTC thermistor, Mechanical mounting: screw.
Weitere Produktangebote APTM50DDA10T3G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| APTM50DDA10T3G | Hersteller : Microsemi Power Products Group |
 Description: MOSFET 2N-CH 500V 37A SP3 |
Produkt ist nicht verfügbar |
||
| APTM50DDA10T3G | Hersteller : Microchip Technology |
Discrete Semiconductor Modules DOR CC3039 |
Produkt ist nicht verfügbar |
||
| APTM50DDA10T3G | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 28A; SP3; Press-in PCB; Idm: 140A Semiconductor structure: diode/transistor Case: SP3 Type of semiconductor module: MOSFET transistor Electrical mounting: Press-in PCB Technology: POWER MOS 7® On-state resistance: 0.12Ω Drain current: 28A Gate-source voltage: ±30V Pulsed drain current: 140A Power dissipation: 312W Drain-source voltage: 500V Topology: boost chopper x2; NTC thermistor Mechanical mounting: screw |
Produkt ist nicht verfügbar |