AS7C325632-10BIN Alliance Memory, Inc.
Hersteller: Alliance Memory, Inc.Description: IC SRAM 8MBIT PARALLEL 90TFBGA
Packaging: Tray
Package / Case: 90-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 90-TFBGA (8x13)
Part Status: Active
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 31.54 EUR |
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Technische Details AS7C325632-10BIN Alliance Memory, Inc.
Description: IC SRAM 8MBIT PARALLEL 90TFBGA, Packaging: Tray, Package / Case: 90-TFBGA, Mounting Type: Surface Mount, Memory Size: 8Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 90-TFBGA (8x13), Part Status: Active, Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 10 ns, Memory Organization: 1M x 8, DigiKey Programmable: Not Verified.
Weitere Produktangebote AS7C325632-10BIN nach Preis ab 32.01 EUR bis 34.92 EUR
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AS7C325632-10BIN | Hersteller : Alliance Memory |
SRAM 8M, 3.3V, 10ns, FAST 256K X 32 Asyn SRAM |
auf Bestellung 210 Stücke: Lieferzeit 10-14 Tag (e) |
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| AS7C325632-10BIN | Hersteller : ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 3.3V; 10ns; TFBGA90 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Access time: 10ns Case: TFBGA90 Mounting: SMD Integrated circuit features: fast Operating voltage: 3.3V Anzahl je Verpackung: 240 Stücke |
Produkt ist nicht verfügbar |
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| AS7C325632-10BIN | Hersteller : ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 3.3V; 10ns; TFBGA90 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Access time: 10ns Case: TFBGA90 Mounting: SMD Integrated circuit features: fast Operating voltage: 3.3V |
Produkt ist nicht verfügbar |