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AS7C325632-10BIN

AS7C325632-10BIN Alliance Memory, Inc.


Alliance%20Memory_8M%20Fast_AS7C325632-10BIN_January%202017_v1.0.pdf Hersteller: Alliance Memory, Inc.
Description: IC SRAM 8MBIT PARALLEL 90TFBGA
Packaging: Tray
Package / Case: 90-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 90-TFBGA (8x13)
Part Status: Active
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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Anzahl Preis
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Technische Details AS7C325632-10BIN Alliance Memory, Inc.

Description: IC SRAM 8MBIT PARALLEL 90TFBGA, Packaging: Tray, Package / Case: 90-TFBGA, Mounting Type: Surface Mount, Memory Size: 8Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 90-TFBGA (8x13), Part Status: Active, Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 10 ns, Memory Organization: 1M x 8, DigiKey Programmable: Not Verified.

Weitere Produktangebote AS7C325632-10BIN nach Preis ab 22.18 EUR bis 22.18 EUR

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AS7C325632-10BIN AS7C325632-10BIN Hersteller : Alliance Memory Alliance Memory_8M Fast_AS7C325632-10BIN_January 2-1288277.pdf SRAM 8M, 3.3V, 10ns, FAST 256K X 32 Asyn SRAM
auf Bestellung 157 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.18 EUR
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AS7C325632-10BIN Hersteller : ALLIANCE MEMORY pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBCD3BDE311A0E0DC&compId=Alliance_Selection_Guide%20_Print2025.pdf?ci_sign=34f5d2d34cac1150f1f21237b486cf42d4e4f4fb Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 3.3V; 10ns; TFBGA90; -40÷85°C
Type of integrated circuit: SRAM memory
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Access time: 10ns
Operating voltage: 3.3V
Memory: 8Mb SRAM
Kind of memory: asynchronous; SRAM
Integrated circuit features: fast
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