BAS33-TAP Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE GEN PURP 30V 200MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35 (DO-204AH)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 nA @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.09 EUR |
| 30000+ | 0.088 EUR |
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Technische Details BAS33-TAP Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 30V 200MA DO35, Packaging: Tape & Box (TB), Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Speed: Small Signal =< 200mA (Io), Any Speed, Technology: Standard, Capacitance @ Vr, F: 3pF @ 0V, 1MHz, Current - Average Rectified (Io): 200mA, Supplier Device Package: DO-35 (DO-204AH), Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA, Current - Reverse Leakage @ Vr: 1 nA @ 15 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BAS33-TAP nach Preis ab 0.042 EUR bis 0.7 EUR
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BAS33-TAP | Hersteller : VISHAY |
Category: THT universal diodes Description: Diode: switching; THT; 40V; 0.2A; Ifsm: 2A; DO35; Ufmax: 1V; Ir: 1nA Mounting: THT Case: DO35 Leakage current: 1nA Capacitance: 3pF Type of diode: switching Max. forward impulse current: 2A Max. forward voltage: 1V Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: single diode Anzahl je Verpackung: 5 Stücke |
auf Bestellung 13810 Stücke: Lieferzeit 7-14 Tag (e) |
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BAS33-TAP | Hersteller : VISHAY |
Category: THT universal diodes Description: Diode: switching; THT; 40V; 0.2A; Ifsm: 2A; DO35; Ufmax: 1V; Ir: 1nA Mounting: THT Case: DO35 Leakage current: 1nA Capacitance: 3pF Type of diode: switching Max. forward impulse current: 2A Max. forward voltage: 1V Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: single diode |
auf Bestellung 13810 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS33-TAP | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 30V 200MA DO35 Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Capacitance @ Vr, F: 3pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 (DO-204AH) Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 1 nA @ 15 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5456 Stücke: Lieferzeit 21-28 Tag (e) |
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| BAS33-TAP | Hersteller : Vishay Semiconductors |
Diodes - General Purpose, Power, Switching 40 Volt 200mA 2.0 Amp IFSM |
auf Bestellung 19517 Stücke: Lieferzeit 14-28 Tag (e) |
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BAS33-TAP | Hersteller : Vishay |
Rectifier Diode Small Signal Switching 40V 0.2A Automotive 2-Pin DO-35 Ammo |
Produkt ist nicht verfügbar |
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BAS33-TAP | Hersteller : Vishay |
Diode Small Signal Switching 40V 0.2A 2-Pin DO-35 Ammo |
Produkt ist nicht verfügbar |