BAS33-TAP Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 30V 200MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 nA @ 15 V
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 10000+ | 0.069 EUR |
| 20000+ | 0.062 EUR |
| 30000+ | 0.059 EUR |
| 50000+ | 0.055 EUR |
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Technische Details BAS33-TAP Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 30V 200MA DO35, Packaging: Tape & Box (TB), Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Speed: Small Signal =< 200mA (Io), Any Speed, Technology: Standard, Capacitance @ Vr, F: 3pF @ 0V, 1MHz, Current - Average Rectified (Io): 200mA, Supplier Device Package: DO-204AH (DO-35), Operating Temperature - Junction: 175°C (Max), Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA, Current - Reverse Leakage @ Vr: 1 nA @ 15 V, Qualification: AEC-Q101.
Weitere Produktangebote BAS33-TAP nach Preis ab 0.076 EUR bis 0.43 EUR
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BAS33-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 30V 200MA DO35 Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 1 nA @ 15 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: DO-204AH (DO-35) Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 3pF @ 0V, 1MHz Technology: Standard Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Packaging: Cut Tape (CT) |
auf Bestellung 8689 Stücke: Lieferzeit 10-14 Tag (e) |
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| BAS33-TAP | Vishay Semiconductors |
Diodes - General Purpose, Power, Switching 40 Volt 200mA 2.0 Amp IFSM |
auf Bestellung 19517 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BAS33-TAP |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 30V 200MA DO35
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 nA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-204AH (DO-35)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 30V 200MA DO35
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 nA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-204AH (DO-35)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
auf Bestellung 8689 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 44+ | 0.4 EUR |
| 71+ | 0.25 EUR |
| 115+ | 0.15 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.1 EUR |
| 2000+ | 0.089 EUR |
| 5000+ | 0.076 EUR |
| BAS33-TAP |
|
Hersteller: Vishay Semiconductors
Diodes - General Purpose, Power, Switching 40 Volt 200mA 2.0 Amp IFSM
Diodes - General Purpose, Power, Switching 40 Volt 200mA 2.0 Amp IFSM
auf Bestellung 19517 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 0.43 EUR |
| 10+ | 0.35 EUR |
| 100+ | 0.19 EUR |
| 500+ | 0.13 EUR |