BCP55-10 Diotec Semiconductor
Hersteller: Diotec Semiconductor
Description: TRANS NPN 60V 1A SOT223
Packaging: Strip
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.3 W
Description: TRANS NPN 60V 1A SOT223
Packaging: Strip
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.3 W
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1000+ | 0.75 EUR |
2000+ | 0.52 EUR |
4000+ | 0.33 EUR |
8000+ | 0.3 EUR |
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Technische Details BCP55-10 Diotec Semiconductor
Description: TRANS NPN 60V 1A SOT223, Packaging: Strip, Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V, Frequency - Transition: 100MHz, Supplier Device Package: SOT-223, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1.3 W.
Weitere Produktangebote BCP55-10 nach Preis ab 0.14 EUR bis 0.92 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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BCP55-10 | Hersteller : Diotec Semiconductor | Bipolar Transistors - BJT BJT, SOT-223, 60V, 1000mA, NPN |
auf Bestellung 2210 Stücke: Lieferzeit 10-14 Tag (e) |
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BCP55-10 | Hersteller : Diotec Semiconductor | Trans GP BJT NPN 60V 1A 2000mW 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 640 Stücke: Lieferzeit 14-21 Tag (e) |
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BCP55-10 | Hersteller : Diotec Semiconductor | Trans GP BJT NPN 60V 1A 2000mW 4-Pin(3+Tab) SOT-223 |
auf Bestellung 620 Stücke: Lieferzeit 14-21 Tag (e) |
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BCP55-10 | Hersteller : Diotec Electronics | Trans GP BJT NPN 60V 1A 2000mW 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 574 Stücke: Lieferzeit 14-21 Tag (e) |
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BCP55-10 | Hersteller : NXP/Nexperia/We-En | Транзистор NPN; Ptot, Вт = 0,65; Uceo, В = 60; Ic = 1 А; Тип монт. = smd; ft, МГц = 180; hFE = 105 @ 150 mA, 2 V; Icutoff-max = 100 нА; Тексп, °С = -55...+150; SOT-223 |
auf Bestellung 55 Stücke: Lieferzeit 14-21 Tag (e) |
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BCP55-10 | Hersteller : Diotec Semiconductor | Trans GP BJT NPN 60V 1A 2000mW 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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BCP55-10 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 2W Case: SOT223 Current gain: 63...160 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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BCP55-10 | Hersteller : LUGUANG ELECTRONIC |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 1A; 1.5W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 1.5W Case: SOT223 Current gain: 63...160 Mounting: SMD Frequency: 100MHz Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BCP55-10 | Hersteller : Diotec Semiconductor |
Description: IC Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Supplier Device Package: SOT-223 Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 100MHz Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.3 W |
Produkt ist nicht verfügbar |
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BCP55-10 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 2W Case: SOT223 Current gain: 63...160 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
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BCP55-10 | Hersteller : LUGUANG ELECTRONIC |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 1A; 1.5W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 1.5W Case: SOT223 Current gain: 63...160 Mounting: SMD Frequency: 100MHz |
Produkt ist nicht verfügbar |